Electron-lattice coupling

D. A. Drabold, P. A. Fedders, S. Klemm, O. F. Sankey, The finite temperature properties of amorphous silicon,Phys. Rev. Lett. 67 2179 (1991).
D. A. Drabold, Anderson transition and thermal effects on electron states in amorphous Si, J. Non. Cryst. Sol. 266, 211 (2000 ).
D. A. Drabold and P. A. Fedders, The electronic consequences of the mutual presence of structural and thermal disorder, Phys. Rev. B Rapid. 60 R721 (1999)
D. A. Drabold, S. Nakhmanson and X. Zhang, Electronic structure of amorphous insulators and photo structural effects in chalcogenide glasses, Properties and Applications of Amorphous Materials, M. F. Thorpe and L. Tichy, Eds., NATO Science Series, II. Mathematics, Physics and Chemistry, Vol 9 pp. 221-250 Kluwer (2001)
D. A. Drabold and Jun Li, Electrons and Phonons in amorphous silicon: deformation potentials and solutions of the time-dependent Schrodinger equation, MRS Conference Proceedings, 715 A14.1 (2002).
R. Atta-Fynn, P. Biswas and D. A. Drabold, The electron-phonon coupling is large for localized states, Phys. Rev. B 69 245204 (2004).
K. Prasai, P. Biswas and D. A. Drabold.Electrons and Phonons in Amorphous Semiconductors, invited Topical Review in: Semicon. Sci. Tech. 31 073002 (2016).
K. Nepal, A. Gautam, R. Hussein, K. Konstantinou, S. R. Elliott, C. Ugwumadu and D. A. Drabold, Electronic and thermal properties of the phase-change memory material, Ge2Sb2Te5, and results from spatially resolved transport calculations. Solid State Sciences, (Submitted Oct. 2025).

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